Raman studies on nanocomposite silicon carbonitride thin film deposited by RF magnetron sputtering at different substrate temperatures

摘要

Raman studies of nanocomposite SiCN thin film by sputtering showed that withan increase of substrate temperature from room temperature to 500oC, atransition from mostly sp2 graphitic phase to sp3 carbon took place which wasobserved from the variation of ID/IG ratio and the peak shifts. This processresulted in the growth of C3N4 and Si3N4 crystallites in the amorphous matrixwhich led to an increase in hardness and modulus obtained throughnanoindentation. However, at a further higher temperature of 600oC, again anincrease of sp2 C concentration in the film was observed and the H and E valuesshowed a decrease due to increased growth of graphitic carbon phase. The wholeprocess got reflected in a modified four stage Ferrari Robertson model of Ramanspectroscopy.